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ZXM62P02E6
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
-20
V
I D =-250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1
μ A
V DS =-20V, V GS =0V
Gate-Body Leakage
I GSS
± 100
nA
V GS = ± 12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
-0.7
V
I D =-250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.2
0.375
?
?
V GS =-4.5V, I D =-1.6A
V GS =-2.7V, I D =-0.8A
Forward Transconductance (3)
g fs
1.5
S
V DS =-10V,I D =-0.8A
DYNAMIC (3)
Input Capacitance
C iss
320
pF
Output Capacitance
C oss
150
pF
V DS =-15 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
75
pF
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
4.1
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
15.4
12.0
ns
ns
V DD =-10V, I D =-1.6A
R G =6.0 ? , R D =6.1 ?
(Refer to test circuit)
Fall Time
t f
19.2
ns
Total Gate Charge
Q g
5.8
nC
Gate-Source Charge
Q gs
1.25
nC
V DS =-16V,V GS =-4.5V,
I D =-1.6A
Gate Drain Charge
Q gd
2.8
nC
(Refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95
V
T j =25°C, I S =-1.6A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
22.5
10.4
ns
nC
T j =25°C, I F =-1.6A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JU NE 2004
4
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